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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DDTC115GE-7

DDTC115GE-7

DDTC115GE-7
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number DDTC115GE-7
Manufacturer Diodes Incorporated
Description TRANS PREBIAS NPN 150MW SOT523
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 724026 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs
$0.03$0.03

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Part Number DDTC115GE-7 Manufacturer Diodes Incorporated
Description TRANS PREBIAS NPN 150MW SOT523 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 724026 pcs Data sheet DDTC1x4GE, DDTC115GE
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SOT-523 Series -
Resistor - Emitter Base (R2) 100 kOhms Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case SOT-523
Other Names DDTC115GE7 Mounting Type Surface Mount
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount SOT-523 DC Current Gain (hFE) (Min) @ Ic, Vce 82 @ 5mA, 5V
Current - Collector Cutoff (Max) 500nA (ICBO) Current - Collector (Ic) (Max) 100mA
Base Part Number DDTC115

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