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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BDV65B

BDV65B

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Part Number BDV65B
Manufacturer Central Semiconductor
Description POWER TRANSISTOR NPN TO218
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 4794 pcs
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Product parameter

Part Number BDV65B Manufacturer Central Semiconductor
Description POWER TRANSISTOR NPN TO218 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 4794 pcs Data sheet Power Transistors TO-218 Case General Purpose
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic - Transistor Type NPN
Supplier Device Package TO-218 Series -
Power - Max 125W Packaging Bulk
Package / Case TO-218-3 Other Names BDV65BCS
Operating Temperature - Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition 60MHz Detailed Description Bipolar (BJT) Transistor NPN 100V 12A 60MHz 125W Through Hole TO-218
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V Current - Collector Cutoff (Max) -
Current - Collector (Ic) (Max) 12A

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