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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - RF > NESG7030M04-A

NESG7030M04-A

NESG7030M04-A
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Part Number NESG7030M04-A
Manufacturer CEL (California Eastern Laboratories)
Description DISCRETE RF DIODE
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5300 pcs
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Part Number NESG7030M04-A Manufacturer CEL (California Eastern Laboratories)
Description DISCRETE RF DIODE Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5300 pcs Data sheet NESG7030M04
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 4.3V
Transistor Type NPN Supplier Device Package M04
Series - Power - Max 125mW
Packaging Bulk Package / Case SOT-343F
Other Names NESG7030M04A Operating Temperature 150°C (TJ)
Noise Figure (dB Typ @ f) 0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gain 14dB ~ 21dB Frequency - Transition 5.8GHz
Detailed Description RF Transistor NPN 4.3V 30mA 5.8GHz 125mW Surface Mount M04 DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 5mA, 2V
Current - Collector (Ic) (Max) 30mA

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