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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > WPB4002-1E

WPB4002-1E

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Part Number WPB4002-1E
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 23A TO3P3L
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5270 pcs
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Part Number WPB4002-1E Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 23A TO3P3L Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5270 pcs Data sheet WPB4002
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id -
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3P-3L Series -
Rds On (Max) @ Id, Vgs 360 mOhm @ 11.5A, 10V Power Dissipation (Max) 2.5W (Ta), 220W (Tc)
Packaging Tube Package / Case TO-3P-3, SC-65-3
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 30V Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 600V
Detailed Description N-Channel 600V 23A (Ta) 2.5W (Ta), 220W (Tc) Through Hole TO-3P-3L Current - Continuous Drain (Id) @ 25°C 23A (Ta)

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