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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > SMBT35200MT1G

SMBT35200MT1G

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Part Number SMBT35200MT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 35V 2A 6TSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 250778 pcs
Reference Price
(In US Dollars)
3000 pcs
$0.083

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Quantity:
Total:
$0.083

Product parameter

Part Number SMBT35200MT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 35V 2A 6TSOP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 250778 pcs Data sheet MBT35200MT1
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 35V
Vce Saturation (Max) @ Ib, Ic 310mV @ 20mA, 2A Transistor Type PNP
Supplier Device Package 6-TSOP Series -
Power - Max 625mW Packaging Tape & Reel (TR)
Package / Case SOT-23-6 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz Detailed Description Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW Surface Mount 6-TSOP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A, 1.5V Current - Collector Cutoff (Max) 100nA
Current - Collector (Ic) (Max) 2A

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