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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > PN100_G

PN100_G

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Part Number PN100_G
Manufacturer AMI Semiconductor / ON Semiconductor
Description INTEGRATED CIRCUIT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4751 pcs
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Product parameter

Part Number PN100_G Manufacturer AMI Semiconductor / ON Semiconductor
Description INTEGRATED CIRCUIT Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4751 pcs Data sheet
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 400mV @ 20mA, 200mA Transistor Type NPN
Supplier Device Package TO-92-3 Series -
Power - Max 625mW Packaging Bulk
Package / Case TO-226-3, TO-92-3 (TO-226AA) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Bipolar (BJT) Transistor NPN 45V 500mA 250MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 5V Current - Collector Cutoff (Max) 50nA
Current - Collector (Ic) (Max) 500mA Base Part Number PN100

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