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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVD5802NT4G-TB01

NVD5802NT4G-TB01

NVD5802NT4G-TB01
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Part Number NVD5802NT4G-TB01
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 40V 101A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4529 pcs
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Part Number NVD5802NT4G-TB01 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 40V 101A DPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4529 pcs Data sheet NTD5802N, NVD5802N
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 3.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package DPAK Series Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs 4.4 mOhm @ 50A, 10V Power Dissipation (Max) 2.5W (Ta), 93.75W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 5300pF @ 12V Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Drain to Source Voltage (Vdss) 40V
Detailed Description N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 101A (Tc)

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