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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NVB5860NT4G

NVB5860NT4G

NVB5860NT4G
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Part Number NVB5860NT4G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 169A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4985 pcs
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Part Number NVB5860NT4G Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 60V 169A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4985 pcs Data sheet NxB5860NT4G
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D2PAK-3 Series -
Rds On (Max) @ Id, Vgs 3 mOhm @ 75A, 10V Power Dissipation (Max) 283W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 10760pF @ 25V Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 60V
Detailed Description N-Channel 60V 220A (Tc) 283W (Tc) Surface Mount D2PAK-3 Current - Continuous Drain (Id) @ 25°C 220A (Tc)

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