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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTMSD6N303R2SG

NTMSD6N303R2SG

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Part Number NTMSD6N303R2SG
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 30V 6A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 126520 pcs
Reference Price
(In US Dollars)
2500 pcs
$0.188

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Quantity:
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$0.188

Product parameter

Part Number NTMSD6N303R2SG Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 30V 6A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 126520 pcs Data sheet NTMSD6N303R2
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC Series FETKY™
Rds On (Max) @ Id, Vgs 32 mOhm @ 6A, 10V Power Dissipation (Max) 2W (Ta)
Packaging Tape & Reel (TR) Package / Case 8-SOIC (0.154", 3.90mm Width)
Operating Temperature - Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 3 (168 Hours) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
FET Type N-Channel FET Feature Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description N-Channel 30V 6A (Ta) 2W (Ta) Surface Mount 8-SOIC Current - Continuous Drain (Id) @ 25°C 6A (Ta)

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