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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NTMS4177PR2G

NTMS4177PR2G

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Part Number NTMS4177PR2G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 30V 6.6A 8-SOIC
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 174554 pcs
Reference Price
(In US Dollars)
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$0.319$0.279$0.215$0.159$0.128

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$0.319

Product parameter

Part Number NTMS4177PR2G Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 30V 6.6A 8-SOIC Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 174554 pcs Data sheet NTMS4177P
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOIC Series -
Rds On (Max) @ Id, Vgs 12 mOhm @ 11.4A, 10V Power Dissipation (Max) 840mW (Ta)
Packaging Cut Tape (CT) Package / Case 8-SOIC (0.154", 3.90mm Width)
Other Names NTMS4177PR2GCT Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 45 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 24V Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
FET Type P-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Drain to Source Voltage (Vdss) 30V
Detailed Description P-Channel 30V 6.6A (Ta) 840mW (Ta) Surface Mount 8-SOIC Current - Continuous Drain (Id) @ 25°C 6.6A (Ta)

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