NTMD6601NR2G
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See Product Specifications for product details.
Buy NTMD6601NR2G with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | NTMD6601NR2G |
|---|---|
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET 2N-CH 80V 1.1A 8SOIC |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | NTMD6601NR2G | Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|---|---|
| Description | MOSFET 2N-CH 80V 1.1A 8SOIC | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 4575 pcs | Data sheet | NTMD6601NR2G |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC | Series | - |
| Rds On (Max) @ Id, Vgs | 215 mOhm @ 2.2A, 10V | Power - Max | 600mW |
| Packaging | Tape & Reel (TR) | Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Type | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 80V | Detailed Description | Mosfet Array 2 N-Channel (Dual) 80V 1.1A 600mW Surface Mount 8-SOIC |
| Current - Continuous Drain (Id) @ 25°C | 1.1A |
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