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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > NSVDTC123JET1G

NSVDTC123JET1G

NSVDTC123JET1G
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Part Number NSVDTC123JET1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 50V 0.1A SC75
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1054318 pcs
Reference Price
(In US Dollars)		6000 pcs
$0.022

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Part Number NSVDTC123JET1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 50V 0.1A SC75 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1054318 pcs Data sheet MUN2235, MUN5235, DTC123Jxx, NSBC123JF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package SC-75, SOT-416 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 200mW Packaging Tape & Reel (TR)
Package / Case SC-75, SOT-416 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 4 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA

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