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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSVBSP19AT1G

NSVBSP19AT1G

NSVBSP19AT1G
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Part Number NSVBSP19AT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 350V 0.1A SOT223
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4272 pcs
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Part Number NSVBSP19AT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 350V 0.1A SOT223 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4272 pcs Data sheet BSP19AT1
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 350V
Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 50mA Transistor Type NPN
Supplier Device Package SOT-223 (TO-261) Series -
Power - Max 800mW Packaging Tape & Reel (TR)
Package / Case TO-261-4, TO-261AA Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 70MHz
Detailed Description Bipolar (BJT) Transistor NPN 350V 100mA 70MHz 800mW Surface Mount SOT-223 (TO-261) DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA, 10V
Current - Collector Cutoff (Max) 20nA (ICBO) Current - Collector (Ic) (Max) 100mA

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