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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSV20101JT1G

NSV20101JT1G

NSV20101JT1G
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Part Number NSV20101JT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 20V 1A 89SC3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 85043 pcs
Reference Price
(In US Dollars)		3000 pcs
$0.23

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Product parameter

Part Number NSV20101JT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 20V 1A 89SC3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 85043 pcs Data sheet NSS20101J
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 20V
Vce Saturation (Max) @ Ib, Ic 220mV @ 100mA, 1A Transistor Type NPN
Supplier Device Package SC-89-3 Series -
Power - Max 255mW Packaging Tape & Reel (TR)
Package / Case SC-89, SOT-490 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 14 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 350MHz Detailed Description Bipolar (BJT) Transistor NPN 20V 1A 350MHz 255mW Surface Mount SC-89-3
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA, 2V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 1A

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