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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NSS12501UW3T2G

NSS12501UW3T2G

NSS12501UW3T2G
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Part Number NSS12501UW3T2G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 12V 5A 3-WDFN
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 204648 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs
$0.123$0.114$0.113

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Part Number NSS12501UW3T2G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 12V 5A 3-WDFN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 204648 pcs Data sheet NSS12501UW3T2G
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 12V
Vce Saturation (Max) @ Ib, Ic 120mV @ 400mA, 4A Transistor Type NPN
Supplier Device Package 3-WDFN (2x2) Series -
Power - Max 875mW Packaging Tape & Reel (TR)
Package / Case 3-WDFN Exposed Pad Other Names NSS12501UW3T2GOSTR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 8 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 150MHz
Detailed Description Bipolar (BJT) Transistor NPN 12V 5A 150MHz 875mW Surface Mount 3-WDFN (2x2) DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A, 2V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 5A
Base Part Number NSS12501

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