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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBC143EPDP6T5G

NSBC143EPDP6T5G

NSBC143EPDP6T5G
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Part Number NSBC143EPDP6T5G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 254MW SOT963
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 1069983 pcs
Reference Price
(In US Dollars)		8000 pcs
$0.022

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Part Number NSBC143EPDP6T5G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 254MW SOT963 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1069983 pcs Data sheet MUN5332DW1, NSBC143EPDxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-963 Series -
Resistor - Emitter Base (R2) 4.7 kOhms Resistor - Base (R1) 4.7 kOhms
Power - Max 339mW Packaging Tape & Reel (TR)
Package / Case SOT-963 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 14 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963 DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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