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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBC123JPDXV6T1

NSBC123JPDXV6T1

NSBC123JPDXV6T1
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Part Number NSBC123JPDXV6T1
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN/PNP SOT563
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 5931 pcs
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Part Number NSBC123JPDXV6T1 Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN/PNP SOT563 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5931 pcs Data sheet NSBC114EPDXV6T1,5 Series
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 500mW Packaging Cut Tape (CT)
Package / Case SOT-563, SOT-666 Other Names NSBC123JPDXV6OSCT
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number NSBC1*

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