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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > NSBC115EPDXV6T1G

NSBC115EPDXV6T1G

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Part Number NSBC115EPDXV6T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description SS SOT563 RSTR XSTR TR
Lead Free Status / RoHS Status
In Stock 932891 pcs
Reference Price
(In US Dollars)		8000 pcs
$0.026

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$0.026

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Part Number NSBC115EPDXV6T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description SS SOT563 RSTR XSTR TR Lead Free Status / RoHS Status
Quantity Available 932891 pcs Data sheet MUN5336DW1, NSBC115EPDXV6
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SOT-563 Series Automotive, AEC-Q101
Resistor - Emitter Base (R2) 100 kOhms Resistor - Base (R1) 100 kOhms
Power - Max 357mW Package / Case SOT-563, SOT-666
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 52 Weeks Frequency - Transition -
Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 357mW Surface Mount SOT-563 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA

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