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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > NJVMJD32T4G

NJVMJD32T4G

NJVMJD32T4G
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Part Number NJVMJD32T4G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 40V 3A DPAK-4
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 225296 pcs
Reference Price
(In US Dollars)		2500 pcs
$0.091

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$0.091

Product parameter

Part Number NJVMJD32T4G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 40V 3A DPAK-4 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 225296 pcs Data sheet MJD31 (NPN), MJD32 (PNP)
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A Transistor Type PNP
Supplier Device Package DPAK Series -
Power - Max 1.56W Packaging Tape & Reel (TR)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 22 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 3MHz Detailed Description Bipolar (BJT) Transistor PNP 40V 3A 3MHz 1.56W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A, 4V Current - Collector Cutoff (Max) 50µA
Current - Collector (Ic) (Max) 3A

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