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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > NGTB50N65FL2WAG

NGTB50N65FL2WAG

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Part Number NGTB50N65FL2WAG
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT FIELD STOP 650V TO247-4
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 21051 pcs
Reference Price
(In US Dollars)		90 pcs
$1.646

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$1.646

Product parameter

Part Number NGTB50N65FL2WAG Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT FIELD STOP 650V TO247-4 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 21051 pcs Data sheet NGTB50N65FL2WAG
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 650V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 50A Test Condition 400V, 50A, 10 Ohm, 15V
Td (on/off) @ 25°C 23ns/123ns Switching Energy 420µJ (on), 550µJ (off)
Supplier Device Package TO-247-4L Series -
Reverse Recovery Time (trr) 94ns Power - Max 417W
Packaging Tube Package / Case TO-247-4
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type Field Stop
Gate Charge 215nC Detailed Description IGBT Field Stop 650V 160A 417W Through Hole TO-247-4L
Current - Collector Pulsed (Icm) 160A Current - Collector (Ic) (Max) 160A

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