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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays > NCV1413BDR2G

NCV1413BDR2G

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Part Number NCV1413BDR2G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 7NPN DARL 50V 0.5A 16SO
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 219428 pcs
Reference Price
(In US Dollars)		1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.206$0.18$0.138$0.109$0.087

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Part Number NCV1413BDR2G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS 7NPN DARL 50V 0.5A 16SO Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 219428 pcs Data sheet MC1413(B), NCV1413B
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 500µA, 350mA Transistor Type 7 NPN Darlington
Supplier Device Package 16-SOIC Series -
Power - Max - Packaging Cut Tape (CT)
Package / Case 16-SOIC (0.154", 3.90mm Width) Other Names NCV1413BDR2GOSCT
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 30 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor Array 7 NPN Darlington 50V 500mA Surface Mount 16-SOIC DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 350mA, 2V
Current - Collector Cutoff (Max) - Current - Collector (Ic) (Max) 500mA
Base Part Number NCV1413

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