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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > MUN5332DW1T1G

MUN5332DW1T1G

MUN5332DW1T1G
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Part Number MUN5332DW1T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN/PNP SOT363
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5750 pcs
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Part Number MUN5332DW1T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN/PNP SOT363 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5750 pcs Data sheet MUN5332DW1, NSBC143EPDxx
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Supplier Device Package SC-88/SC70-6/SOT-363 Series -
Resistor - Emitter Base (R2) 4.7 kOhms Resistor - Base (R1) 4.7 kOhms
Power - Max 250mW Packaging Tape & Reel (TR)
Package / Case 6-TSSOP, SC-88, SOT-363 Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition - Detailed Description Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250mW Surface Mount SC-88/SC70-6/SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA Base Part Number MUN53**DW1

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