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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > MUN2112T1G

MUN2112T1G

MUN2112T1G
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Part Number MUN2112T1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 230MW SC59
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 2602162 pcs
Reference Price
(In US Dollars)		15000 pcs
$0.009

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Part Number MUN2112T1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS PNP 230MW SC59 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 2602162 pcs Data sheet MUNx112, MMUN2112L, DTA124Exx, NSBA124EF3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA Transistor Type PNP - Pre-Biased
Supplier Device Package SC-59 Series -
Resistor - Emitter Base (R2) 22 kOhms Resistor - Base (R1) 22 kOhms
Power - Max 230mW Packaging Tape & Reel (TR)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names MUN2112T1G-ND
MUN2112T1GOSTR
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 10 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 230mW Surface Mount SC-59 DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V
Current - Collector Cutoff (Max) 500nA Current - Collector (Ic) (Max) 100mA
Base Part Number MUN2112

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