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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MPS6601G

MPS6601G

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Part Number MPS6601G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 25V 1A TO92
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5240 pcs
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Part Number MPS6601G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 25V 1A TO92 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5240 pcs Data sheet MPS660x, 665x
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 25V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A Transistor Type NPN
Supplier Device Package TO-92-3 Series -
Power - Max 625mW Packaging Bulk
Package / Case TO-226-3, TO-92-3 (TO-226AA) Other Names MPS6601GOS
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 100MHz Detailed Description Bipolar (BJT) Transistor NPN 25V 1A 100MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA, 1V Current - Collector Cutoff (Max) 100nA
Current - Collector (Ic) (Max) 1A Base Part Number MPS6601

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