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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MMBT6517LT3G

MMBT6517LT3G

MMBT6517LT3G
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Part Number MMBT6517LT3G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 350V 0.1A SOT-23
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5281 pcs
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Part Number MMBT6517LT3G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 350V 0.1A SOT-23 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5281 pcs Data sheet MMBT6517LT1, 3
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 350V
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA Transistor Type NPN
Supplier Device Package SOT-23-3 (TO-236) Series -
Power - Max 225mW Packaging Cut Tape (CT)
Package / Case TO-236-3, SC-59, SOT-23-3 Other Names MMBT6517LT3GOSCT
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Bipolar (BJT) Transistor NPN 350V 100mA 200MHz 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA, 10V Current - Collector Cutoff (Max) 50nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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