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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE4343G

MJE4343G

MJE4343G
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Part Number MJE4343G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 160V 16A TO247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 56888 pcs
Reference Price
(In US Dollars)		1 pcs30 pcs120 pcs510 pcs1020 pcs
$1.274$1.082$0.938$0.799$0.673

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$1.274

Product parameter

Part Number MJE4343G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 160V 16A TO247 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 56888 pcs Data sheet MJE4343, 53
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 2A, 16A Transistor Type NPN
Supplier Device Package TO-247 Series -
Power - Max 125W Packaging Tube
Package / Case TO-247-3 Other Names MJE4343GOS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 2 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 1MHz
Detailed Description Bipolar (BJT) Transistor NPN 160V 16A 1MHz 125W Through Hole TO-247 DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 8A, 2V
Current - Collector Cutoff (Max) 750µA Current - Collector (Ic) (Max) 16A

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