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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJE271G

MJE271G

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Part Number	MJE271G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP DARL 100V 2A TO-225
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4570 pcs
Reference Price (In US Dollars)	Get a quote

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Product parameter

Part Number	MJE271G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP DARL 100V 2A TO-225	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4570 pcs	Data sheet	MJE270, 271
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	3V @ 1.2mA, 120mA	Transistor Type	PNP - Darlington
Supplier Device Package	TO-225AA	Series	-
Power - Max	1.5W	Packaging	Bulk
Package / Case	TO-225AA, TO-126-3	Other Names	MJE271G-ND MJE271GOS
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	6MHz	Detailed Description	Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce	1500 @ 120mA, 10V	Current - Collector Cutoff (Max)	1mA
Current - Collector (Ic) (Max)	2A

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