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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD5731T4G

MJD5731T4G

MJD5731T4G
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Part Number MJD5731T4G
Manufacturer ON Semiconductor
Description TRANS PNP 350V 1A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 244373 pcs
Reference Price
(In US Dollars)		2500 pcs5000 pcs12500 pcs25000 pcs
$0.094$0.088$0.084$0.081

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Product parameter

Part Number MJD5731T4G Manufacturer ON Semiconductor
Description TRANS PNP 350V 1A DPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 244373 pcs Data sheet MJD5731
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1A
Voltage - Breakdown DPAK-3 Vce Saturation (Max) @ Ib, Ic 350V
Series - RoHS Status Tape & Reel (TR)
Resistor - Base (R1) (Ohms) 10MHz Power - Max 1.56W
Polarization TO-252-3, DPak (2 Leads + Tab), SC-63 Other Names MJD5731T4G-ND
MJD5731T4GOSTR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 6 Weeks
Manufacturer Part Number MJD5731T4G Frequency - Transition 30 @ 300mA, 10V
Expanded Description Bipolar (BJT) Transistor PNP 350V 1A 10MHz 1.56W Surface Mount DPAK-3 Description TRANS PNP 350V 1A DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce 100µA Current - Collector Cutoff (Max) 1V @ 200mA, 1A
Current - Collector (Ic) (Max) PNP

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