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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD45H11-1G

MJD45H11-1G

MJD45H11-1G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number MJD45H11-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 80V 8A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 200280 pcs
Reference Price
(In US Dollars)
1 pcs75 pcs150 pcs525 pcs1050 pcs
$0.251$0.209$0.17$0.135$0.108

Submit a Request For Quotation on quantities greater than those displayed.

Target Price:(USD)
Quantity:
Total:
$0.251

Product parameter

Part Number MJD45H11-1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 80V 8A IPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 200280 pcs Data sheet MJD44H11, MJD45H11
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 80V
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A Transistor Type PNP
Supplier Device Package I-PAK Series -
Power - Max 1.75W Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Other Names MJD45H11-1GOS
MJD45H111G
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 8 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 90MHz
Detailed Description Bipolar (BJT) Transistor PNP 80V 8A 90MHz 1.75W Through Hole I-PAK DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A, 1V
Current - Collector Cutoff (Max) 1µA Current - Collector (Ic) (Max) 8A
Base Part Number MJD45H11

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