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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD31C1G

MJD31C1G

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Part Number	MJD31C1G
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 100V 3A IPAK
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 319510 pcs
Reference Price (In US Dollars)	1 pcs	75 pcs	150 pcs	525 pcs	1050 pcs
Reference Price (In US Dollars)	$0.169	$0.135	$0.108	$0.085	$0.066

Product parameter
Data sheet

Product parameter

Part Number	MJD31C1G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 100V 3A IPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	319510 pcs	Data sheet	MJD31 (NPN), MJD32 (PNP)
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	1.2V @ 375mA, 3A	Transistor Type	NPN
Supplier Device Package	I-PAK	Series	-
Power - Max	1.56W	Packaging	Tube
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	Other Names	MJD31C1G-ND MJD31C1GOS
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	2 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	3MHz
Detailed Description	Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK	DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 3A, 4V
Current - Collector Cutoff (Max)	50µA	Current - Collector (Ic) (Max)	3A
Base Part Number	MJD31

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