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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJD253-1G

MJD253-1G

MJD253-1G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number MJD253-1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 100V 4A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 203564 pcs
Reference Price
(In US Dollars)		1 pcs75 pcs150 pcs525 pcs1050 pcs
$0.276$0.227$0.186$0.147$0.117

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Target Price:(USD)
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$0.276

Product parameter

Part Number MJD253-1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 100V 4A IPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 203564 pcs Data sheet MJD243,253
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A Transistor Type PNP
Supplier Device Package I-PAK Series -
Power - Max 1.4W Packaging Tube
Package / Case TO-251-3 Short Leads, IPak, TO-251AA Other Names MJD253-1G-ND
MJD253-1GOS
MJD2531G
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 4 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 40MHz
Detailed Description Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 4A
Base Part Number MJD253

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