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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MBT35200MT1G

MBT35200MT1G

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Part Number MBT35200MT1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 35V 2A 6TSOP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 441930 pcs
Reference Price
(In US Dollars)		3000 pcs6000 pcs15000 pcs30000 pcs
$0.059$0.055$0.051$0.05

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Part Number MBT35200MT1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 35V 2A 6TSOP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 441930 pcs Data sheet MBT35200MT1
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 35V
Vce Saturation (Max) @ Ib, Ic 310mV @ 20mA, 2A Transistor Type PNP
Supplier Device Package 6-TSOP Series -
Power - Max 625mW Packaging Tape & Reel (TR)
Package / Case SOT-23-6 Other Names MBT35200MT1GOS
MBT35200MT1GOS-ND
MBT35200MT1GOSTR
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 25 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 100MHz
Detailed Description Bipolar (BJT) Transistor PNP 35V 2A 100MHz 625mW Surface Mount 6-TSOP DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A, 1.5V
Current - Collector Cutoff (Max) 100nA Current - Collector (Ic) (Max) 2A
Base Part Number MBT35200

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