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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQU2N90TU-AM002

FQU2N90TU-AM002

FQU2N90TU-AM002
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number FQU2N90TU-AM002
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 1.7A IPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 109539 pcs
Reference Price
(In US Dollars)
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$0.426$0.377$0.298$0.231$0.182

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Product parameter

Part Number FQU2N90TU-AM002 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 1.7A IPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 109539 pcs Data sheet FQD2N90/FQU2N90
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package I-PAK Series QFET®
Rds On (Max) @ Id, Vgs 7.2 Ohm @ 850mA, 10V Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Packaging Tube Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Other Names FQU2N90TU_AM002
FQU2N90TU_AM002-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 500pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 900V Detailed Description N-Channel 900V 1.7A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)

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