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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQT1N80TF-WS

FQT1N80TF-WS

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Part Number FQT1N80TF-WS
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 0.2A SOT-223
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 112642 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs1000 pcs
$0.445$0.395$0.312$0.242$0.191

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Quantity:
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$0.445

Product parameter

Part Number FQT1N80TF-WS Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 0.2A SOT-223 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 112642 pcs Data sheet FQT1N80TF_WSMA04A Pkg Drawing
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-223-3 Series QFET®
Rds On (Max) @ Id, Vgs 20 Ohm @ 100mA, 10V Power Dissipation (Max) 2.1W (Tc)
Packaging Cut Tape (CT) Package / Case TO-261-4, TO-261AA
Other Names FQT1N80TF-WSCT
FQT1N80TF_WSCT
FQT1N80TF_WSCT-ND
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 6 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 195pF @ 25V Gate Charge (Qg) (Max) @ Vgs 7.2nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 200mA (Tc) 2.1W (Tc) Surface Mount SOT-223-3 Current - Continuous Drain (Id) @ 25°C 200mA (Tc)

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