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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQP2NA90

FQP2NA90

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Part Number FQP2NA90
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 2.8A TO-220
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4743 pcs
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Part Number FQP2NA90 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 900V 2.8A TO-220 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4743 pcs Data sheet TO220B03 Pkg DrawingFQP2NA90
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220-3 Series QFET®
Rds On (Max) @ Id, Vgs 5.8 Ohm @ 1.4A, 10V Power Dissipation (Max) 107W (Tc)
Packaging Tube Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 25V Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 900V
Detailed Description N-Channel 900V 2.8A (Tc) 107W (Tc) Through Hole TO-220-3 Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)

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