FQI11P06TU
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See Product Specifications for product details.
Buy FQI11P06TU with confidence from Components-World.HK, 1 Year Warranty
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| Part Number | FQI11P06TU |
|---|---|
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET P-CH 60V 11.4A I2PAK |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | FQI11P06TU | Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|---|---|
| Description | MOSFET P-CH 60V 11.4A I2PAK | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 5876 pcs | Data sheet | FQB11P06, FQI11P06 |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±25V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | I2PAK (TO-262) | Series | QFET® |
| Rds On (Max) @ Id, Vgs | 175 mOhm @ 5.7A, 10V | Power Dissipation (Max) | 3.13W (Ta), 53W (Tc) |
| Packaging | Tube | Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Through Hole |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Type | P-Channel | FET Feature | - |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Drain to Source Voltage (Vdss) | 60V |
| Detailed Description | P-Channel 60V 11.4A (Tc) 3.13W (Ta), 53W (Tc) Through Hole I2PAK (TO-262) | Current - Continuous Drain (Id) @ 25°C | 11.4A (Tc) |
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