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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQB33N10LTM

FQB33N10LTM

FQB33N10LTM
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number FQB33N10LTM
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 100V 33A D2PAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 69776 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs
$0.628$0.557$0.44

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Target Price:(USD)
Quantity:
Total:
$0.628

Product parameter

Part Number FQB33N10LTM Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 100V 33A D2PAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 69776 pcs Data sheet FQB33N10L, FQI33N10L
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V Technology MOSFET (Metal Oxide)
Supplier Device Package D²PAK (TO-263AB) Series QFET®
Rds On (Max) @ Id, Vgs 52 mOhm @ 16.5A, 10V Power Dissipation (Max) 3.75W (Ta), 127W (Tc)
Packaging Original-Reel® Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other Names FQB33N10LTMDKR Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 20 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1630pF @ 25V Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Drain to Source Voltage (Vdss) 100V
Detailed Description N-Channel 100V 33A (Tc) 3.75W (Ta), 127W (Tc) Surface Mount D²PAK (TO-263AB) Current - Continuous Drain (Id) @ 25°C 33A (Tc)

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