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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQAF10N80

FQAF10N80

FQAF10N80
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Part Number FQAF10N80
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 6.7A TO-3PF
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5113 pcs
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Part Number FQAF10N80 Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 800V 6.7A TO-3PF Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5113 pcs Data sheet FQAF10N80
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3PF Series QFET®
Rds On (Max) @ Id, Vgs 1.05 Ohm @ 3.35A, 10V Power Dissipation (Max) 113W (Tc)
Packaging Tube Package / Case SC-94
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 800V
Detailed Description N-Channel 800V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF Current - Continuous Drain (Id) @ 25°C 6.7A (Tc)

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