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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJNS3212RBU

FJNS3212RBU

FJNS3212RBU
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Part Number FJNS3212RBU
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 300MW TO92S
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4702 pcs
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Part Number FJNS3212RBU Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 300MW TO92S Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4702 pcs Data sheet FJNS3212R
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package TO-92S Series -
Resistor - Base (R1) 47 kOhms Power - Max 300mW
Packaging Bulk Package / Case TO-226-3, TO-92-3 Short Body
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 250MHz
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92S DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 100mA

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