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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJNS3203RTA

FJNS3203RTA

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Part Number	FJNS3203RTA
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PREBIAS NPN 300MW TO92S
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 4220 pcs
Reference Price (In US Dollars)	Get a quote

Product parameter
Data sheet

Product parameter

Part Number	FJNS3203RTA	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PREBIAS NPN 300MW TO92S	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4220 pcs	Data sheet	FJNS3203R
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA	Transistor Type	NPN - Pre-Biased
Supplier Device Package	TO-92S	Series	-
Resistor - Emitter Base (R2)	22 kOhms	Resistor - Base (R1)	22 kOhms
Power - Max	300mW	Packaging	Tape & Box (TB)
Package / Case	TO-226-3, TO-92-3 Short Body	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92S
DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 5mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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