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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJN3313RBU

FJN3313RBU

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Part Number FJN3313RBU
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 300MW TO92-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4518 pcs
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Part Number FJN3313RBU Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 300MW TO92-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4518 pcs Data sheet FJN3313
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package TO-92-3 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 2.2 kOhms
Power - Max 300mW Packaging Bulk
Package / Case TO-226-3, TO-92-3 (TO-226AA) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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