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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > FJN3306RTA

FJN3306RTA

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Part Number FJN3306RTA
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 300MW TO92-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4007 pcs
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Part Number FJN3306RTA Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PREBIAS NPN 300MW TO92-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4007 pcs Data sheet
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Transistor Type NPN - Pre-Biased
Supplier Device Package TO-92-3 Series -
Resistor - Emitter Base (R2) 47 kOhms Resistor - Base (R1) 10 kOhms
Power - Max 300mW Packaging Tape & Box (TB)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 250MHz Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 300mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 100mA

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