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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGA25N120FTD

FGA25N120FTD

FGA25N120FTD
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Part Number FGA25N120FTD
Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 50A 313W TO3P
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5033 pcs
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Part Number FGA25N120FTD Manufacturer AMI Semiconductor / ON Semiconductor
Description IGBT 1200V 50A 313W TO3P Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5033 pcs Data sheet FGA25N120FTD
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 25A Test Condition 600V, 25A, 15 Ohm, 15V
Td (on/off) @ 25°C 48ns/210ns Switching Energy 340µJ (on), 900µJ (off)
Supplier Device Package TO-3PN Series -
Reverse Recovery Time (trr) 770ns Power - Max 313W
Packaging Tube Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Type Standard IGBT Type Trench Field Stop
Gate Charge 160nC Detailed Description IGBT Trench Field Stop 1200V 50A 313W Through Hole TO-3PN
Current - Collector Pulsed (Icm) 75A Current - Collector (Ic) (Max) 50A

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