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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDFME2P823ZT

FDFME2P823ZT

FDFME2P823ZT
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Part Number FDFME2P823ZT
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 20V 2.6A 6MICROFET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5042 pcs
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Part Number FDFME2P823ZT Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET P-CH 20V 2.6A 6MICROFET Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5042 pcs Data sheet FDFME2P823ZT
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1V @ 250µA
Vgs (Max) ±8V Technology MOSFET (Metal Oxide)
Supplier Device Package 6-MicroFET (1.6x1.6) Series PowerTrench®
Rds On (Max) @ Id, Vgs 142 mOhm @ 2.3A, 4.5V Power Dissipation (Max) 1.4W (Ta)
Packaging Tape & Reel (TR) Package / Case 6-UFDFN Exposed Pad
Other Names FDFME2P823ZT-ND
FDFME2P823ZTTR
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 4.5V FET Type P-Channel
FET Feature Schottky Diode (Isolated) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Drain to Source Voltage (Vdss) 20V Detailed Description P-Channel 20V 2.6A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)
Current - Continuous Drain (Id) @ 25°C 2.6A (Ta)

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