FDC636P
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| Part Number | FDC636P |
|---|---|
| Manufacturer | AMI Semiconductor / ON Semiconductor |
| Description | MOSFET P-CH 20V 2.8A SSOT-6 |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Reference Price (In US Dollars) | Get a quote | ||||
- Product parameter
- Data sheet
Product parameter
| Part Number | FDC636P | Manufacturer | AMI Semiconductor / ON Semiconductor |
|---|---|---|---|
| Description | MOSFET P-CH 20V 2.8A SSOT-6 | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Quantity Available | 5857 pcs | Data sheet | FDC636P |
| Category | Discrete Semiconductor Products | Vgs(th) (Max) @ Id | 1V @ 250µA |
| Vgs (Max) | ±8V | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | SuperSOT™-6 | Series | - |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 2.8A, 4.5V | Power Dissipation (Max) | 1.6W (Ta) |
| Packaging | Tape & Reel (TR) | Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Other Names | FDC636P-ND FDC636PTR |
Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V | FET Type | P-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Drain to Source Voltage (Vdss) | 20V | Detailed Description | P-Channel 20V 2.8A (Ta) 1.6W (Ta) Surface Mount SuperSOT™-6 |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Ta) |
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