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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDC6301N_G

FDC6301N_G

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Part Number FDC6301N_G
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET 2 N-CH 25V SUPERSOT6
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 4416 pcs
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Part Number FDC6301N_G Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET 2 N-CH 25V SUPERSOT6 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4416 pcs Data sheet
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package SuperSOT™-6 Series -
Rds On (Max) @ Id, Vgs 4 Ohm @ 400mA, 4.5V Power - Max 700mW
Packaging Tape & Reel (TR) Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 9.5pF @ 10V Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 25V Detailed Description Mosfet Array 2 N-Channel (Dual) 25V 220mA 700mW Surface Mount SuperSOT™-6
Current - Continuous Drain (Id) @ 25°C 220mA

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