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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FCP20N60_G

FCP20N60_G

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Part Number FCP20N60_G
Manufacturer AMI Semiconductor / ON Semiconductor
Description INTEGRATED CIRCUIT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5490 pcs
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Part Number FCP20N60_G Manufacturer AMI Semiconductor / ON Semiconductor
Description INTEGRATED CIRCUIT Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5490 pcs Data sheet
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220-3 Series SuperFET™
Rds On (Max) @ Id, Vgs 190 mOhm @ 10A, 10V Power Dissipation (Max) 208W (Tc)
Packaging Tube Package / Case TO-220-3
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 3080pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 20A (Tc) 208W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C 20A (Tc)

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