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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FCD4N60TM_WS

FCD4N60TM_WS

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Part Number FCD4N60TM_WS
Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 3.9A DPAK
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5310 pcs
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Part Number FCD4N60TM_WS Manufacturer AMI Semiconductor / ON Semiconductor
Description MOSFET N-CH 600V 3.9A DPAK Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5310 pcs Data sheet FCD4N60
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 5V @ 250µA
Vgs (Max) ±30V Technology MOSFET (Metal Oxide)
Supplier Device Package D-Pak Series SuperFET™
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 2A, 10V Power Dissipation (Max) 50W (Tc)
Packaging Tape & Reel (TR) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Other Names FCD4N60TM_WSTR Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Input Capacitance (Ciss) (Max) @ Vds 540pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 16.6nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600V Detailed Description N-Channel 600V 3.9A (Tc) 50W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc) Base Part Number FCD4N60

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