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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BUV21G

BUV21G

BUV21G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number BUV21G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 200V 40A TO-3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 12787 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs100 pcs500 pcs
$3.876$3.501$2.899$2.524

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Target Price:(USD)
Quantity:
Total:
$3.876

Product parameter

Part Number BUV21G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 200V 40A TO-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 12787 pcs Data sheet BUV21
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 200V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 3A, 25A Transistor Type NPN
Supplier Device Package TO-3 Series SWITCHMODE™
Power - Max 250W Packaging Tray
Package / Case TO-204AE Other Names BUV21G-ND
BUV21GOS-NDOS
BUV21GOSOS
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 2 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 8MHz
Detailed Description Bipolar (BJT) Transistor NPN 200V 40A 8MHz 250W Through Hole TO-3 DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 12A, 2V
Current - Collector Cutoff (Max) 3mA Current - Collector (Ic) (Max) 40A

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