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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC5707-E

2SC5707-E

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Part Number	2SC5707-E
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 50V 8A TP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 187802 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	100 pcs	500 pcs	1000 pcs
Reference Price (In US Dollars)	$0.274	$0.242	$0.185	$0.146	$0.117

Product parameter
Data sheet

Product parameter

Part Number	2SC5707-E	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 50V 8A TP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	187802 pcs	Data sheet	2SA2040/2SC5707
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	240mV @ 175mA, 3.5A	Transistor Type	NPN
Supplier Device Package	TP	Series	-
Power - Max	1W	Packaging	Bulk
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	Other Names	2SC5707-E-ND 2SC5707-EOS 2SC5707E
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	2 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	330MHz
Detailed Description	Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 500mA, 2V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	8A

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